ts m6 0 n 1r4 60 0v, 3.3 a, 1.4 n - channel power mosfet 1 / 7 version: a14 to - 252 (dpak) to - 251 (ipak) key parameter performance parameter value unit v ds 60 0 v r ds(on) (max) 1.4 q g 7.7 nc features super - junction technology high performance due to small figure - of - merit high ruggedness performance high commutation performance block diagram n - channel mosfet application power supply lighting ordering information part no. package packing tsm 60 n 1r4 c h c5g to - 2 51 75 pcs / tube tsm 60 n 1r4 c p r o g to - 2 52 2.5k pcs / 13 reel note: g denotes for haloge n - and antimony - free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds absolute maximum rating s ( t c = 25 c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 6 00 v gate - source voltage v gs 3 0 v continuous drain current (note 1 ) t c = 25 c i d 3.3 a pulsed drain current (note 2 ) i dm 9.9 a total power dissipation @ t c = 25 c p dtot 38 w single pulsed avalanche energy (note 3 ) e as 64 mj single pulsed avalanche curr ent (note 3 ) i as 1.6 a operating junction and storage temperature range t j , t stg - 55 to +1 50 c thermal performance parameter symbol limit unit junction to case thermal resistance r ? jc 3.3 c /w junction to ambient thermal resistance r ? ja 62 c/w pin definition : 1. gate 2. drain 3. source
ts m6 0 n 1r4 60 0v, 3.3 a, 1.4 ? n - channel power mosfet 2 / 7 version: a14 electrical specifications ( t c = 25 c unless otherwise noted ) parameter conditions symbol min typ max u nit static (note 4 ) drain - source breakdown voltage v gs = 0 v, i d = 250 a bv dss 6 00 - - -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) 2 3 4 v gate body leakage v gs = 3 0 v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 6 0 0v, v gs = 0v i dss -- -- 1 a drain - source on - state resistance v gs = 10v, i d = 2 a r ds(o n) -- 0. 88 1.4 ? dynamic (note 5 ) total gate charge v ds = 3 8 0 v, i d = 3.3 a, v gs = 10 v q g -- 7.7 -- nc gate - source charge q gs -- 1.9 -- gate - drain charge q gd -- 2.8 -- input capacitance v ds = 100 v, v gs = 0v, f = 1.0mhz c iss -- 370 -- pf output capacitance c os s -- 34 -- g ate resistance f = 1 mhz , open drain r g -- 3. 4 -- ? switching (note 6 ) turn - on delay time v dd = 3 8 0v, r gen = 25 ? , i d = 3.3 a, v gs = 10v, t d(on) -- 1 4 -- ns turn - on rise time t r -- 22 -- turn - off delay time t d(off) -- 24 -- turn - o ff fall time t f -- 20 -- source - drain diode (note 4 ) forward on voltag e i s = 3.3 a, v gs = 0v v sd - - -- 1. 4 v r everse recovery time v r = 20 0v, i s = 2 a di f /dt = 100a/ ? s t rr -- 163 -- ns r everse recovery charge q rr -- 1 -- ? c notes: 1. current limited by package 2. pulse width limited by the m aximum junction temperature 3. l = 50 mh, i as = 1.6 a, v dd = 50 v, r g = 25 ? , start ing t j = 25 c 4. p ulse test: pw "d 300s , d u ty cycle "d 2% 5. for design aid only, not subject to production testing. 6. switching time is essentially independent of operating temperature.
ts m6 0 n 1r4 60 0v, 3.3 a, 1.4 ? n - channel power mosfet 3 / 7 version: a14 electrical characteristics curve s output characteristics transfer characteristics on - resistance vs. drain current gate - source voltage vs . gate charge on - resistance vs. junction temperature source - drain diode forward current vs. voltage
ts m6 0 n 1r4 60 0v, 3.3 a, 1.4 ? n - channel power mosfet 4 / 7 version: a14 electrical characteristics curve s capacitance vs. drain - source voltage bv dss vs. junction temperature maximum safe operating area (dpak/ipak) normalized thermal transient impedance, junction - to - case (dpak/ipak) 10 - 4 10 - 3 10 - 2 1 0 - 1 10 0 normalized effective transient thermal impedance 10 - 7 10 - 6 10 - 5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 1 duty=0.5 duty=0.2 duty=0.1 duty=0.05 duty=0.02 duty=0.01 s ingle pulse square wave pulse duration (sec)
ts m6 0 n 1r4 60 0v, 3.3 a, 1.4 ? n - channel power mosfet 5 / 7 version: a14 to - 251 (ipak) mechanical drawing unit: millimeter marking diagram y = y ear code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
ts m6 0 n 1r4 60 0v, 3.3 a, 1.4 ? n - channel power mosfet 6 / 7 version: a14 to - 252 (dpak) mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
ts m6 0 n 1r4 60 0v, 3.3 a, 1.4 ? n - channel power mosfet 7 / 7 version: a14 notice specifications of the pr oducts displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, e xpress or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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